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The 1Gb DDR3 SDRAM C-die is organized as a 32Mbit x 4/16Mbit x 8/
1GB DDR3 SDRAM c-die被组织为一个32兆×4 / 16mbit x 8 /
8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high
8mbit x 16我/ OS X 8banks装置。该同步装置达到高
speed double-data-rate transfer rates of up to 1333Mb/sec/pin (DDR3-
高速双数据速率传输速率高达1333mb /秒/销(DDR3—
1333) for general applications.
1333)一般应用。
The chip is designed to comply with the following key DDR3 SDRAM features
该芯片的设计符合以下关键DDR3 SDRAM的特性
such as posted CAS, Programmable CWL, Internal (Self) Calibration,
如发CAS,可编程CWL,内部(自我)的校准,
On Die Termination using ODT pin and Asynchronous Reset .
终结使用ODT引脚和异步复位。
All of the control and address inputs are synchronized with a pair of externally
所有控件和地址输入都与外部的一对同步。
supplied differential clocks. Inputs are latched at the crosspoint of differential
供应差分时钟。输入锁定在微分交叉点
clocks (CK rising and CK falling). All I/Os are synchronized with a
时钟(CK上升和CK下降)。所有I/O都与A同步。
pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion.
双向双闪灯(DQS和DQS)在源同步时尚。
The address bus is used to convey row, column, and bank address
地址总线用于传输行、列和银行地址。
information in a RAS/CAS multiplexing style. The DDR3 device operates
RAS / CAS多路复用方式中的信息。DDR3器件工作
with a single 1.5V ± 0.075V power supply and 1.5V ± 0.075V VDDQ.
与单一1.5V±0.075v电源和1.5V±0.075v VDDQ。
The 1Gb DDR3 device is available in 94ball FBGAs(x4/x8) and 112ball
1GB DDR3器件在94ball FBGAs可用(X4、X8)和112ball
FBGA(x16)
FBGA(x16)
世鼎科技有限公司是一家电子元器件的科技公司。
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