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1150 kg mono wafer - dopant: Phosphorus, Boron (test plates) resistivity > 1 ohmcm,
1350 kg mono wafer - dopant: Phosphorus, Boron ( test plates ) ,
800 damaged ingot, dopant: Phosphorus, Boron, resistivity > 1ohmcm,
310 damaged ingot, dopant: Phosphorus, Boron, resistivity: > 1 ohmcm,
550 top and tail. Phosphorus, Boron dopant, resistivity > 1 ohmcm.